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Power-Down/Power-Up Timing—bq4285E (TA = TOPR)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Conditions
tF
VCC slew from 4.5V to 0V
300
-
s
tR
VCC slew from 0V to 4.5V
100
-
s
tCSR
CS at VIH after power-up
20
-
200
ms
Internal write-protection
period after VCC passes VPFD
on power-up.
tWPT
Write-protect time for
external RAM
10
16
30
s
Delay after VCC slows down
past VPFD before SRAM is
write-protected.
tCER
Chip enable recovery time
tCSR
-
tCSR
ms
Time during which external
SRAM is write-protected after
VCC passes VPFD on power-up.
tCED
Chip enable propagation
delay to external SRAM
-
7
10
ns
Caution:
Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode
may affect data integrity.
Power-Down/Power-Up Timing—bq4285E
bq4285E/L
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相关代理商/技术参数
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BQ4285LQ 制造商:未知厂家 制造商全称:未知厂家 功能描述:
BQ4285LS 制造商:Rochester Electronics LLC 功能描述:- Bulk
BQ4285LSTR 制造商:TI 制造商全称:Texas Instruments 功能描述:Enhanced RTC With NVRAM Control
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